uhf-microwave super hyperabrupt junction varactor diodes description the kv 1900 series of super hyperabrupt varactor di- odes combines low voltage with high ratio tuning. they feature grown junction mesa technology for the highest q commercially available. passivation is our dense mil spec silicon dioxide for the lowest 1/f noise and low leakage even at temperature extremes. they are avail- able in a wide range of package styles including chip (style 00) and most other conventional ceramic micro- wave packages. when ordering, specify the desired case style by adding its number as a suffix to the basic model number. for more details on surface mount super hyperabrupt varactors see the surface mount devices section. applications low voltage / battery powered equipment from uhf through ku band including: ? wide bandwidth vco?s ? voltage tunable filters ? phase shifters ? modulators ? vcxo?s ratings: minimum voltage breakdown: 1 2v@10 m a maximum leakage current: 50 na @ 1 0v/25 c junction operating temp.: -55 c t o +125 c storage temp.: -65 c t o +200 c electrical specifications: t a =25 c model c j @ 1 v (pf) c j @ 2.5 v (pf) c j @ 4 v (pf) c j @ 8 v (pf) q@4v/ 50 mhz kv1911a >36.00 18 - 2 7 <11.80 <6.00 400 kv1951a >26.00 13 - 2 0 < 8.80 <4.50 500 kv1921a >17.00 8.3 - 12.8 < 5.80 <3.00 600 KV1931A >13.00 6.3 - 9.8 < 4.30 <2.50 750 kv1941a > 9.00 4.3 - 6.3 < 2.80 <1.50 900 kv1961a > 3.80 1.8 - 2.8 < 1.30 <0.80 1200 kv1971a > 1.65 0.9 - 1.35 < 0.60 <0.35 1400 kv1981a > 1.20 0.6 - 0.9 < 0.45 <0.30 1600 kv1991a > 0.60 0.3 - 0.6 < 0.25 <0.15 1800 semiconductor operation 75 technology drive ? lowell, ma 01851 ? tel: 978-442-5600 ? fax: 978-937-3748 39
|
